The DMT47M2LDVQ can replace two discrete MOSFETs to reduce the board space footprint in many automotive applications, from electric seat control to advanced driver-assistance systems (ADAS).
The device integrates two n-channel enhancement mode MOSFETs with the industry's lowest RDS(ON) for this configuration – just 10.9mΩ at VGS of 10V and ID of 30.2A. This low on-resistance keeps conduction losses to a minimum in applications such as wireless charging or motor control.
The typical gate charge of 14.0nC, at a VGS of 10V and ID of 20A, ensures that switching losses are minimised.
The DMT47M2LDVQ’s thermally efficient PowerDI 3333-8 package returns a junction-to-case thermal resistance (Rthjc) of 8.43°C/W, making it possible to develop end applications with a higher power density than with MOSFETs packaged individually. This can reduce the PCB area needed for implementing automotive features, including ADAS.
