The new product is equipped with a SRAM compatible parallel interface, offering a much more efficient alternative to battery backup SRAM.
Based on the unique features of FRAM as a non-volatile memory, such as fast overwrite at 150 ns and read/write endurance of 1013, the MB85R8M2T can be used to replace a SRAM and remove the backup battery at the same time.
As a result, manufacturers will be able to achieve a more compact hardware system and a significant saving in component and maintenance cost combined with a commitment on long term product availability.
The MB85R8M2T offers a wide voltage range from 1.8V to 3.6 V. It is available in a 48-pin FBGA package measuring 8.00 x 6.00 mm.
