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29 Dec 2015

GaN RF power transistors in 10 to 200W ratings

Ampleon has extended its portfolio of GaN RF power transistors based on a 0.5um HEMT process technology. Comprising 10, 30, 50 and 100W devices, over ten transistors are currently available for applications such as drivers up to C band, through to 100 and 200W push-pull packages for use in final stages up to S band. Housed in a compact and thermally stable ceramic package, the CLF1G range is suitable for use in applications that need to meet specific requirements of size, weight and power.

Optimised for best in class linearity, power efficiency, and broadband power performance, Ampleon’s GaN devices are available with electrical models, reference designs and demonstration boards. Typical applications include use in commercial aviation and radar applications, aerospace and defence systems, and broadband solutions.

Devices available include the CLF1G0035S-50, a broadband 50W amplifier capable of operation from DC through to 3.5GHz that is designed for operation up to 50V and is claimed to feature excellent VSWR capabilities of 10:1.

ampleon

GaN RF power transistor

http://www.ampleon.com/