Cree launches GaN transistors for S-Band radar amplifier systems
Two new GaN high electron mobility transistors (HEMTs) have been unveiled by Cree.
Suitable for use in 2.9 to 3.5GHz S-Band radar amplifier systems, the devices are based on the company's 50V, 0.4µm GaN on SiC foundry process
Performance rated at 85°C, both the 150W CGHV35150 and 400W CGHV35400F exhibit high efficiency, high power gain, wide bandwidth capabilities, and uniform performance at high temperatures.
The CGHV35150 features 150W typical output power, 13.5dB power gain and 50% typical drain efficiency, while the CGHV35400F offers 400W typical output power, 10.5dB power gain, and 60% typical drain efficiency.
Both devices feature <0.3dB pulsed amplitude droop and are said to offer much smaller footprints compared to gallium arsenide and silicon rf technology.
Target applications include weather, air traffic control, marine, port surveillance, and search and rescue radar applications.
