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Infineon announces next generation CoolGaN transistor families

Infineon has unveiled two new generations of high voltage (HV) and medium voltage (MV) CoolGaN devices.

Credit: Infineon

These devices will enable customers to use Gallium Nitride (GaN) in voltage classes from 40 V to 700 V in a broader array of applications that help drive digitalisation and decarbonisation. The new 650 V G5 family addresses applications in consumer, data centre, industrial and solar.

These products are the next generation of GIT-based high voltage products from Infineon. The second new family manufactured on the 8-inch process is the medium voltage G3 devices which include CoolGaN Transistor voltage classes 60 V, 80 V, 100 V and 120 V; and 40 V bidirectional switch (BDS) devices.

The medium voltage G3 products are targeted at motor drive, telecom, data centre, solar and consumer applications.

The CoolGaN 650 V G5 will be available in Q4 2024 and the medium voltage CoolGaN G3 will be available in Q3 2024.

Samples are available now.