“Infineon is a global leader in power solutions and we believe that the next big thing in power management is gallium nitride,” said Steffen Metzger, Senior Director High Voltage Conversion at Infineon. “The market for GaN has been gaining a strong momentum; the advantages of using this technology in certain applications are evident. From operating expense and capital expenditure reduction, through higher power density enabling smaller and lighter designs, to overall system cost reduction, the benefits are compelling.”
Infineon’s CoolGaN is a globally qualified GaN solution. At 100 ppm (parts per million), its predicted lifetime is about 55 years, exceeding the expected lifespan by 40 years.
Full production of CoolGaN 400 V and 600 V e-mode HEMTs will start by end of 2018, according to Infineon. CoolGaN 400 V will be available in 70 mΩ in SMD bottom-side cooled TO-leadless and top-side cooled DSO-20-87 package.
CoolGaN 600 V comes in top-side cooled DSO-20-87 package and bottom-side cooled DSO-20-85. With 70 mΩ and 190 mΩ 600V CoolGaN devices in bottom-side cooled TO-leadless and DFN 8x8 packages, the 600V CoolGaN portfolio will be complemented.
