To address this market need Infineon Technologies has added two new products to its CoolSiC power module portfolio: the FF2000UXTR33T2M1 and the FF2600UXTR33T2M1. Both use newly developed 3.3 kV CoolSiC MOSFETs and Infineon’s interconnection technology - .XT. The modules come in a XHP 2 package and have been specifically tailored for traction applications.
In addition to an efficient and robust silicon carbide (SiC) chip, power modules for traction drives require packaging that allow fast switching, along with interconnection technologies that enable a long service life-time.
Infineon’s new power modules offer these features - the CoolSiC MOSFET chips with integrated body diodes in its XHP 2 packaging enable low switching losses while maintaining high reliability and power density.
The XHP 2 packaging also features low stray inductance, a symmetrical and scalable design, and high current carrying capability. The FF2000UXTR33T2M1 module offers a drain-source-on-state resistance of 2.0 mΩ, while the FF2600UXTR33T2M1 features a drain-source-on-state resistance of 2.6 mΩ. Despite the demanding operating profiles of trains, Infineon's .XT interconnect technology improves power cycling capabilities.
Using Infineon’s CoolSiC power modules, train operators will also benefit from a more compact, lighter converter, along with a simplified cooling systems, while tests have also shown that power semiconductors based on SiC significantly reduce engine noise during operation.