The XHP 3 is a flexible IGBT module platform for high-power applications in the voltage range from 3.3 kV up to 6.5 kV and allows for scalable designs with best-in-class reliability and highest power density.
Its symmetrical design, along with low stray inductance, mean it is able to offer significantly improved switching behaviour. As a result, the XHP 3 platform offers a solution for demanding applications such as traction and commercial, construction and agricultural vehicles as well as medium-voltage drives.
The XHP 3 package comprises a compact form factor with 140 mm in length, 100 mm in width and 40 mm in height. The first IGBT modules of this new high-power platform feature a half bridge topology with a blocking voltage of 3.3 kV and a nominal current of 450 A.
In order to meet customers’ demands, two different isolation classes have been launched: 6 kV (FF450R33T3E3) and 10.4 kV (FF450R33T3E3_B5) isolation, respectively. Ultrasonic welded terminals and aluminium nitride substrates along with an aluminium silicon carbide base plate ensure the highest possible level of reliability and robustness.
The high-power IGBT module is designed for paralleling and provides a level of scalability. System designers can adapt the desired power level by paralleling the required number of XHP 3 modules. To facilitate scaling, Infineon offers pre-grouped devices featuring a matched set of static and dynamic parameters.
Using these grouped modules, de-rating is no longer required when paralleling up to eight XHP 3 devices.
