MOSFET gate drivers boost conversion efficiency
1 min read
Diodes has introduced a pair of 40V, 1A rated gate drivers specifically designed to control the high current power MOSFETs used in embedded power supplies and motor drive circuits.
The ZXGD3009E6 (SOT26 package) and ZXGD3009DY (SOT363 package) are designed to help minimise switching losses, improve power density and increase overall conversion efficiency.
Acting as a high gain buffer stage for low power control ICs, the devices can provide a typical drive current of 500mA from an input current of only 10mA, ensuring the desirable fast charging and discharging of the power MOSFET's capacitive load. The drivers' switching capability is ultra fast, with a propagation delay time of less than 5ns, and rise and fall times of less than 20ns.
Separate source and sink outputs offer independent control of MOSFET turn on and turn off times, which enables MOSFET behaviour to be more closely tailored to the needs of the application. The ZXGD3009s' ability to drive the gate negatively as well as positively assures dependable hard turn off of the power MOSFET.
The gate drivers' emitter-follower design avoids any issues of latch up or shoot through and can tolerate peak currents of up to 2A. Their wide 40V operating range will also cater for voltage spikes far beyond the typical 12V normally associated with power MOSFET gate driving.
