MOSFETs increase efficiency by up to 6%
International Rectifier has launched two new R8 radiation hardened (RAD-Hard) power mosfets, optimised for space grade point of load (POL) voltage regulator applications.
The devices utilise IR's Trench technology to offer a low on state resistance of 12milliohms and a total gate charge of 18nC, increasing efficiency performance by up to 6% compared to existing solutions.
The IRHLNM87Y20SCS has a BVDSS rating of 20V and a maximum drain current rating of 17A.
Both of the new devices are available in IR's new SMD 0.2 surface mount style package, which it says achieves a 50% space saving compared to the existing SMD 0.5 package solution.
The mosfets are also offered in a TO-39 package or in die form for microcircuit design solutions.
