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Navitas extends GaNSafe portfolio targeting AI and EV markets

Navitas Semiconductor, an industrial leader in gallium nitride (GaN) power ICs and silicon carbide (SiC) technology, has announced that its high-power GaNSafe family is now available in a TOLT (Transistor Outline Leaded Top-side cooling) package.

Credit: Navitas

The GaNSafe family has been specifically created to serve demanding, high-power applications, such as AI data centres, solar/energy storage, and industrial markets.

Navitas 4th generation integrates control, drive, sensing, and critical protection features that enable improved reliability and robustness. GaNSafe is the world’s safest GaN with short-circuit protection (350ns max latency), 2kV ESD protection on all pins, elimination of negative gate drive, and programmable slew rate control.

All of these features are controlled with 4-pins, allowing the package to be treated like a discrete GaN FET, requiring no VCC pin.

 

The TOLT packaging enhances thermal dissipation through the top side of the package, allowing heat to be dissipated directly to the heatsink (not through the PCBA). This enables the reduction of operating temperature and increases current capability, resulting in the highest level of system power density, efficiency, and reliability.

Suitable for applications from 1 kW to 22 kW, 650 V GaNSafe in TOLT packaging is available with a range of RDS(ON)MAX from 25 to 98 mΩ.

Integrated features and functions include:

  • High-speed short-circuit protection, with autonomous ‘detect and protect’ with ultra-fast 350ns/50 ns latency.
  • Protected, regulated, integrated gate-drive control, with zero gate-source loop inductance for reliable high-speed 2 MHz switching capability to maximize application power density.
  • Electrostatic discharge (ESD) protection of 2 kV, compared to zero for discrete GaN transistors.
  • 650 V continuous, and 800 V transient voltage capability for extraordinary application conditions.
  • Integrated Miller Clamp (no negative gate bias, higher 3rd quadrant efficiency)
  • Programmable turn-on and turn-off speeds (dV/dt) to simplify EMI regulatory requirements.
  • Simple 4-pin device, allowing the package to be treated like a discrete GaN and requiring no additional VCC pin
  • Robust, thermally enhanced packaging: ultra-low RQ_JUNC-AMB and board-level thermal cycling (BLTC) Reliability

In addition to the new ICs, Navitas is planning to offer reference design platforms based on GaNSafe TOLT for applications including data centre power supplies and EV on-board chargers. These system platforms include complete design collateral with fully tested hardware, embedded software, schematics, bill-of-materials, layout, simulation, and hardware test results.