It is now offering a thermally-enhanced, rugged, high-speed, surface-mount TOLL (Transistor Outline Leadless) package that’s intended for demanding, high-power, high-reliability applications.
The devices combine high-power capability and best-in-class low on-resistance of 20 to 55 mΩ, and these 650 V SiC MOSFETs have been optimised to give a much faster switching speed, higher efficiency, and increased power density which are demanded by applications such as AI data centre power supplies, EV charging and energy storage and solar solutions (ESS).
These GeneSiC products use a proprietary ‘trench-assisted planar’ technology that provides efficient performance over the temperature range, with G3F MOSFETs delivering high-speed, cool-running performance that ensures up to 25°C lower case temperatures and up to 3x longer life than alternative SiC products.
Navitas’ latest 4.5 kW AI power system reference design features the G3F45MT60L (650V 40 mΩ, TOLL) G3F SiC MOSFET in an interleaved CCM-TP PFC topology. Complemented by the NV6515 (650V, 35mΩ, TOLL) GaNSafe Power IC in the LLC stage, the 4.5 kW solution has a peak efficiency above 97% and, at 137 W/inch3, it offers amongst the highest power density AI PSU.
For 400 V-rated EV battery systems, G3F in TOLL is a suitable technology for on-board chargers (OBC), DC-DC converters, and traction drives ranging from 6.6 to 22 kW.
The surface-mount TOLL package offers a 9% reduction in junction-to-case thermal resistance (RTH,J-C), 30% smaller PCB footprint, 50% lower height, and 60% smaller size than the traditional D2PAK-7L, enabling high power-density solutions, as demonstrated in the 4.5 kW AI solution.
Additionally, with a minimal package inductance of only 2 nH, excellent fast-switching performance and lowest dynamic losses are achieved.
