These devices enable connectivity of next generation low voltage mobile phone baseband processors with its subscribers’ identity module (SIM) cards. As processor geometries advance to single digit nanometre nodes the core voltage of advanced SOCs continues to move lower, necessitating the need of voltage translators to connect the SOC to other standard process devices and I/O ports like legacy class B and Class C SIM cards.
The NXT4557GU and NXT4556UP dual-supply translators support voltages levels between 1.08 V and 1.98 V on the host processor side and 1.62 V to 3.6 V on the SIM card side. These operating ranges make these devices compliant with legacy Class B (3.0 V ± 10%) and Class C (1.8 V ± 10%) voltage levels, while maintaining compatibility with the voltage levels which will be used by future SIM card interface standards (1.2 V ± 10%).
Both devices feature bidirectional IO and unidirectional RESET and clock channels and also a smart ONE SHOT that enables very low channel propagation delays.
These devices also have a low operating current of 8µA with a standby current of only 1µA to help maximise the battery life of mobile devices. Integrated pull-up resistors help to further reduce power consumption in standby mode, while also lowering overall system BOM cost and space.
The NXT4557GU features an enable (EN) pin and is housed in a leadless XQFN10 package while the NXT4556UP is auto-enabled and comes in an ultra-small WLCSP9 package with 0.35mm pitch.
