Power mosfet offers low on resistance

The SiB455EDK is the latest product built on TrenchFET Gen III p-channel technology, which uses self aligning process techniques to pack 1billion transistor cells into each square inch of silicon. This technology allows a fine submicron pitch process that Vishay says cuts the industry's best on resistance for a p-channel mosfet in half. The SiB455EDK offers on resistance of 27mO at 4.5V, 39 mO at 2.5V, 69 mO at 1.8V, and 130mO at 1.5V. According to Vishay, these values are 55% lower at 4.5V, 52% lower at 2.5V, and 39% lower at 1.8V than the previously leading 12V p-channel device. The mosfet will be used as load, PA, and battery switches in handheld devices such as cell phones, smart phones, PDAs, and MP3 players. The low on resistance of the SiB455EDK translates into lower conduction losses, saving power and prolonging battery life between charges in these devices, while its PowerPAK SC-75 package saves space for other product features or to enable smaller end products. The device has a gate source voltage of 10V and an on resistance rating at 1.5V. This allows it to be used in applications that encounter higher gate drive voltage variation due to surges, spikes, noise, or overvoltages, while providing safer designs for smaller input voltages. To reduce field failures due to ESD, the device features typical ESD protection of 1500V. The mosfet is halogen free in accordance with IEC 61249-2-21 and compliant to RoHS Directive 2002/95/EC.