With this industry-low on-resistance and its 6.15 mm by 5.15 mm thermally enhanced PowerPAK SO-8 single package, the Vishay Siliconix TrenchFET Gen IV SiRA99DP has been purpose-built to increase power density.
The low on-resistance of the MOSFET, which represents a reduction of 43 % compared to the next best product on the market, reduces voltage drops and conduction power losses to enable higher power density. Combining this low RDS(ON) with an ultra low gate charge of 84 nC, the SiRA99DP delivers a best in class gate charge times on-resistance, a critical figure of merit (FOM) for MOSFETs used in switching applications, of 185 mΩ*nC
Intended for circuits with a 12V input, the device has been optimised for adapter, battery, and general purpose power switches; reverse polarity battery protection; OR-ing functionality; and motor drive control in telecom equipment, servers, and industrial PCs and robots.
The SiRA99DP's increased power density saves PCB space in these applications by reducing the number of components needed in parallel - delivering more current per individual device. In addition, as a p-channel MOSFET, the device doesn't require a charge pump to provide the positive gate bias needed by its n-channel counterparts.
The MOSFET is 100 % RG- and UIS-tested, RoHS-compliant, and halogen-free.
