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SemiQ 1200V SiC full-bridge modules simplify applications development

SemiQ, a designer and developer of silicon carbide (SiC) solutions, has announced a new family of three 1200V SiC full-bridge modules, each integrating two of the company's rugged high-speed switching SiC MOSFETs with reliable body diode.

SemiQ 1200V SiC full-bridge modules

The modules have been developed to simplify the development of photovoltaic inverters, energy storage, battery charging and other high-frequency DC applications.

Available in 18, 38 and 77mΩ (RDSon) variants, the modules have been tested at voltages exceeding 1350V and deliver a continuous drain current of up to 102A, a pulsed drain current of up to 250A and a power dissipation of up to 333W.

Operational with a junction temperature of up to 175oC, these rugged B2 modules have very low switching losses (EON 0.13mJ, EOFF 0.04mJ at 25C - 77mΩ module), low zero-gate voltage drain/gate source leakage (0.1µA/1nA - all modules) and low junction to case thermal resistance (0.4oC per watt - 18mΩ module).

"This family of modules simplifies system design and enables faster time-to-market for next-generation solar, storage, and charging solutions," said Seok Joo Jang, Director of Module Engineering at SemiQ.

Now available, these modules can be mounted directly to a heat sink, and are housed in a 62.8 x 33.8 x 15.0mm package (including mounting plates) with press fit terminal connections and split DC negative terminals.