The TK5P60W5 is housed a DPAK, TO-252 package, and is said to achieve a typical diode reverse recovery time (trr) of 65ns. The Input capacitance (Ciss) of 370pF and a QG of 11.5nC support efficient switching operation.
The TK62N60W5 is the largest MOSFET in the series, housed in a 3-pin TO-247 package and supports a power output of 61.8A. It achieves a typical diode trr of 170ns, Ciss of 6500pF and QG of 205nC.
The DTMOS IV-H chips are made using Toshiba’s Deep Trench technology that is claimed to deliver low RDS(ON) at higher temperatures, compared to conventional super junction MOSFETs. It is also said to offer reduced turn-off switching losses than previous technology generations, providing higher efficiency and assisting designers to minimise system size.
