Discover Toshiba’s expanding family of DTMOS Power MOSFETS
1 min read
The latest generation of Toshiba's innovative family of DTMOS power MOSFETs is now available with a Vdss rating of 600V. The DTMOS IV makes your solutions more efficient, with easily controlled switching speed, achieved by optimising RDS(on) x Qg performance, enabling a more effective application design.
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Our compact smart isolation TO-220SIS package with copper connector instead of standard wire bonds, along with the high-performance TO-3P(N) package, form the basis for the devices available, followed by TO-220 and the compact SMD DPAK package. Other compact package options will be available in the future.
Toshiba power MOSFETs
Toshiba power MOSFETs can cover a wide range of applications, due to the many different specifications available. Advanced packaging technology combined with the latest semiconductor designs allow you to design state of the art products with Toshiba MOSFETs. Instead of standard wire bonding, the TO-220SIS and DPAK+ packages use copper connectors to improve the product performance.
In general Toshiba MOSFET packages are available from smallest 1x0.6mm SOT883 to high power TO-3P package with power dissipation up to 400W. The Vdss voltage ranges from 20V up to 900V and maximum continuous current covered by a discrete MOSFET can be up 150A.
Toshiba's key MOSFET families are:
600 to 650V - DTMOS Super Junction style High Voltage MOSFET
• Lowest losses due to highest efficiency switching combined with low Rds(on)
200 to 900V - Pi-MOS High Voltage Standard MOSFET
• Using double diffusion (D-MOS) structure
20 to 120V - U-MOS Toshiba's Low Voltage Trench MOSFET
• Providing low Rds(on) for power management
• "-H" versions for high speed switching (e.g. DC/DC converter)
40 to 100V - Automotive MOSFET
• MOSFETs suitable for Automotive applications.
Discover more here: http://www.toshiba-components.com/dtmos/index.html
