Toshiba has photocouplers for IGBTs and power MOSFETs

The TLP5701 and TLP5702 are supplied in SO6L packages with dimensions of just 10 x 3.8 x 2.1mm. Despite their small size, the new devices have a minimum isolation voltage rating of 5000V_rms and guaranteed creepage and clearance distances of 8mm. As a result they can be used to save space in designs that require safety standard certification. In addition, the couplers offer guaranteed performance and specifications at temperatures ranging from -40 to 110°C. Potential applications range from home appliances and inverters to factory automation and control equipment. The TLP5701 has a peak output current of ±0.6A and is optimised for low power IGBTs and power MOSFETs. A peak output current of ±2.5A makes the TLP5702 ideal for suitable medium power devices. Both of the photocouplers utilise the latest GaAlAs infrared LED and integrated high gain, high speed photodetector technology to deliver high performance operation. An internal faraday shield ensures a guaranteed common mode transient immunity of ±20kV/µs. Maximum propagation delay time is rated at 500ns for the TLP5701 and 200ns for the TLP5702.