The new gate-driver IC family is suited for high-voltage PFC and DC-DC stages as well as for synchronous rectification stages in server, telco and industrial switching mode power supplies (SMPS), says the company. Further applications are 48V-12 V DC-DC converters, battery and electrical vehicle charging stations as well as smart grid and solar micro-inverters.
According to Infineon, the EiceDRIVER family offers industry leading precision timing characteristics, 7ns accuracy for input-to-output propagation delay and maximum 3ns channel-to-channel exactness, both across production and temperature range, enable the next level of power conversion system efficiency. The overall switching efficiencies of Infineon CoolMOS and OptiMOS power MOSFETs can also be increased by the EiceDRIVER source and sink currents (up to 4A and 8A respectively).
The family’s robust integrated galvanic isolation is important for hard switching half-bridge configurations, both from input to outputs as well as between the output channels. Additionally, integrated reinforced input-to-output isolation provides vital electrical safety where needed.
The low resistive output stages of the EiceDRIVER product family reduce internal power dissipation to the minimum, thus the gate-driver IC can deliver maximum power to the gates of power MOSFETs. In addition, when the power MOSFETs are intended to be off, the low-ohmic output stages firmly hold the MOSFET gate voltage at zero, thus avoiding undesired spurious turn-on.
For best fit with application requirements, the new family of 2-channel isolated gate-driver ICs is offered in different versions:
- two output current classes 1 A/2 A or 4A / 8A source/sink
- two isolation classes: functional or reinforced
- three different packages:
- 5x5 mm 13-pin LGA (functional isolation)
- 150 mil 16-pin DSO (functional isolation)
- 300 mil 16-pin DSO (reinforced isolation).
Five initial products of the family can be preordered. More information is available here.
