The IC looks to address a particular problem, in that each time a power MOSFET is turned on or off in a SMPS, parasitic inductances can produce ground-shifts that may cause false triggering of the gate-driver IC.
The device is housed in an ultrasmall (1.5 mm x 1.1 mm x 0.39 mm) 6-pin leadless TSNP package. According to the company, these gate-driver ICs with TDIs are key to high-power-density and high-efficiency designs at a lower system cost compared to alternative solutions.
The TSNP package (1EDN7550U) occupies a PCB-area five times smaller compared to its SOT-23 family members. With a 3.3 V PWM input signal at application level, the EiceDRIVER 1EDN TDI can withstand static ground-shifts of up to ± 70 V and transient ground shifts of as much as ± 150 V peak. This combination of size and ground-shift robustness enables two of these gate-driver ICs to operate in a 48 V half-bridge configuration. Concurrently, designers have the freedom to place these gate-driver ICs in the PCB layout wherever they fit best which is key to enabling industry leading power density.
The EiceDRIVER 1EDN7550U, in leadless TSNP package, enables 25 V and 40 V OptimMOS MOSFETs to operate in switched capacitor topologies at 1.2 MHz switching frequency. In such an application, a high power density of 3060 W/in 3 and a 97.1 % peak efficiency (including auxiliary losses) have proven to be possible.
