Ultra small MOSFETs reduce battery charge time
Two low profile MOSFETs have been introduced by Toshiba. Available in high dissipation packages, the N channel SSM6K781G and P channel SSM6J771G have been developed specifically to meet the high current charging requirements of today's mobile devices.
Both MOSFETs are supplied in a miniature 1.5 x 1mm WCSP6C package that is rated for power dissipation of up to 1.2W. Toshiba says they combine a low on resistance with a very low capacitance.
Typical RDS(ON) ratings are 14.4mO (VGSS = 4.5V) for the N channel SSM6K781G and 26mO (VGSS = -4.5V) for the P channel SSM6J771G.
The SSM6K781G has a maximum DC current rating of 7A, while the SSM6J771G can handle up to -5A with the SSM6J771G being particularly suitable for dual cell charging applications due to its maximum gate source voltage rating of VGSS = +/-12V.
