Designed to provide high efficiency for telecom, server, and datacentre power supply applications, the Siliconix n-channel SiHK045N60E slashes on-resistance by 27 % compared with previous-generation 600 V E Series MOSFETs while delivering 60 % lower gate charge. This results in what Vishay claims is the industry's lowest gate charge times on-resistance for devices in the same class, a key figure of merit (FOM) for 600 V MOSFETs used in power conversion applications.
Vishay offers a broad line of MOSFET technologies that support all stages of the power conversion process, from high voltage inputs to the low voltage outputs required by the latest electronic systems. With the SiHK045N60E and upcoming devices in the fourth-generation 600 V E Series family, the company is addressing the need for efficiency and power density improvements in the first stages of the power system architecture - power factor correction and hard-switched AC/DC converter topologies.
Built on Vishay's latest energy-efficient E Series superjunction technology, the SiHK045N60E features low typical on-resistance of 0.043 Ω at 10 V and ultra-low gate charge down to 65 nC.
For improved switching performance, the SiHK045N60E provides low effective output capacitance Co(er) of 117 pF. These values translate into reduced conduction and switching losses to save energy. The SiHK045N60E's thermal resistance RthJC of 0.45 °C/W provides a high thermal capability.
Offered in the PowerPAK 10x12 package, the device is RoHS-compliant, halogen-free, and designed to withstand overvoltage transients in avalanche mode with guaranteed limits through 100 % UIS testing.
Samples and production quantities are available now.
