Based on the company’s innovative BiCS FLASH 3D flash memory technology with 1bit-per-cell SLC, XL-FLASH brings low latency and high performance to data centre and enterprise storage.
Classified as SCM (or persistent memory), with the ability to retain its contents similar to NAND flash memory, XL-FLASH is said to bridge the performance gap that exists between DRAM and NAND.
While volatile memory solutions such as DRAM provide the access speed needed by demanding applications, that performance is expensive. As the cost-per-bit and scalability of DRAM levels off, this new SCM layer in the memory hierarchy addresses that issue with a high density, cost effective, non-volatile NAND flash memory solution.
Sitting in between DRAM and NAND flash, XL-FLASH brings increased speed, reduced latency and higher storage capacities – at a lower cost than traditional DRAM. XL-FLASH will initially be deployed in an SSD format but could be expanded to memory channel attached devices that sit on the DRAM bus, such as future industry standard non-volatile dual in-line memory modules (NVDIMMs).
Key Features
- 128 gigabit (Gb) die (in a 2-die, 4-die or 8-die package)
- 4kB page size for more efficient operating system reads and writes
- 16-plane architecture for more efficient parallelism
- Fast page read and program times. XL-FLASH provides a low read latency of less than 5 microseconds, approximately 10 times faster than existing TLC
