Engineering publications brought to you by Mark Allen

Memory

New way to write magnetic information

Beyond the threshold

Toshiba predicting annual loss of almost $1billion

Spin Transfer Technologies and Tokyo Electron announce engineering collaboration

Enhancing the capacity of memory devices

Samsung unveils first eMRAM test chip based on 28nm FD-SOI process

Cadence unveils memory design and verification tool

Microchip launches low-voltage 64-megabit serial quad I/O SuperFlash memory

Ideal memory material conceptualised

Researchers create magnetoelectric memory

Samsung introduces V-NAND memory solutions

Enterprise-Class SSDs come with 64-Layer 3D Flash Memory