Engineering publications brought to you by Mark Allen

Memory

ARM unveils new memory interface and next generation debug solutions

25nm DRAM is ‘industry's first’

TI announces first ultra low power FRAM 16bit mcus

Egg shaped magnets hold promise for spinRAM memories

Pilot run of 30nm 2Gb DDR3 DRAM, successful

Imec develops FinFET flow

Intel, Micron announce breakthrough in NAND process and technology design

Japan disaster spurs increase in chip revenue

‘Industry's first’ SuperSpeed usb 3.0 solution

Cadence unveils first DDR4 IP solution

Elpida develops new DRAM for smart phones

Samsung Q1 profit down 34.2% year on year