Engineering publications brought to you by Mark Allen

Memory

Egg shaped magnets hold promise for spinRAM memories

Pilot run of 30nm 2Gb DDR3 DRAM, successful

Imec develops FinFET flow

Intel, Micron announce breakthrough in NAND process and technology design

Japan disaster spurs increase in chip revenue

‘Industry's first’ SuperSpeed usb 3.0 solution

Cadence unveils first DDR4 IP solution

Elpida develops new DRAM for smart phones

Samsung Q1 profit down 34.2% year on year

Intel unveils third generation SSD

Memory breakthrough could lead to denser data storage

Cadence launches first wide I/O memory controller IP solution