Cree licences GaN IP to Transphorm
Cree has signed a worldwide patent license agreement with Transphorm, providing it with access to the company's extensive family of patents related to GaN high electron mobility transistor (HEMT) and GaN Schottky diode devices.
The range of patents address various aspects of making GaN power devices, including nitride materials, HEMT and Schottky diode designs and processing technology.
"Over the last 17 years, Cree has invented technology that enabled the successful introduction of reliable GaN HEMT devices in the rf market," said Cree cto John Palmour. "Many of these inventions can and are expected to be used by others to manufacture devices in the burgeoning area of GaN power management systems."
