The CoolSiC technology delivers a number of benefits for engineers designing advanced power systems across a wide selection of market sectors and applications and Infineon and EBV said that they will be cooperating in order to accelerate the deployment of energy-efficient power devices using CoolSiC technologies.
Silicon carbide is able to deliver some important advantages over the traditional use of silicon, including higher voltage operation, wider operating temperature ranges and higher switching frequencies.
Infineon’s CoolSiC technology looks to build on these inherent advantages and has been used to target a variety of applications such as battery charging, photovoltaic inverters, motor drives, energy storage and power supplies. The CoolSiC portfolio ranges from SiC-based diodes and discrete MOSFETs to hybrid and full SiC modules.
As part of the cooperation between the two companies and available exclusively from Avnet and EBV is an entry-level evaluation board (EVAL-1ED3122MC12H-SiC) from Infineon that has been designed to provide engineers and developers with a simple way to quickly try out the possibilities of the CoolSiC technology. The board is ready for use to evaluate the performance of the 650V or 1200V CoolSiC MOSFETs, which will require soldering to the board depending on the user application.
Key features of the board include the CoolSiC MOSFETs organised in a half-bridge configuration, along with onboard optimised 1ED-X3 family of single-channel galvanically isolated 10A gate drivers, and isolated power supply circuitry to provide the required voltages.
Extensive training programmes, for engineers designing power systems, are available within the framework of this cooperation.
