According to the company, it is applying an advanced high density pitch, self balancing cell build using a novel self aligned contact technology for extremely high current densities and what it calls 'favourable' dynamic switching features over temperatures ranging from -40 to 175ºC. It adds this approach – which takes advantage of sub micron trench technology – will enable its fourth generation IGBTs to demonstrate a saturation voltage (Vce(sat)) of approximately 1.65V and a switching loss (Eoff) of 5µJ/A.
Compared to the previous generation, the new parts will not only cut energy loss by 30%, but also offer 'very strong' latch up immunity.
"Fairchild's new approach involves extremely high electron injection efficiency enhanced by a very fine cell pitch design and hole carrier injection restricted by a new buffer structure," said Fairchild Fellow Thomas Neyer. "These advances yield significant performance advantages and will enable Fairchild to give manufacturers new solutions for efficiently controlling large amounts of power with our IGBTs."
Product family details for Fairchild FS4 IGBT's will be made available in Q4 of 2015.
