Built on UMC’s 40uLP logic process combined with Infineon’s SONOS eFlash technology, when compared with its predecessor, the 55nm Uranus+ platform, this new platform is able to demonstrate a 35% reduction in operating power, driving lower power consumption levels in SoC designs for use in AIoT, IIoT, smart grid, wearable, and portable devices.
The Ariel platform features Cortex-M4 core, 1MB embedded flash, USB OTG, 12-bit ADC, 10-bit DAC, built-in security, and comprehensive SDK support. In addition, DVFS management is implemented for the trade-off between low power and high performance; low-power IP solutions are also adopted to achieve the ultra-low-power requirements of embedded system applications.
By leveraging the advantages of Infineon’s SONOS eFlash, wafer cost and manufacturing cycle time will be able to benefit from far fewer additional mask layers when compared to other eFlash solutions.
“We are pleased to work with Faraday and offer our SONOS eFlash for its Ariel SoC platform,” said Sam Geha, Head of Infineon Technologies LLC Memory Solutions. “The 40uLP SONOS process has already delivered abundant mass-production projects. We believe it will also facilitate Faraday’s customers to develop a wide range of IoT and MCU related products with superior processing performance and faster time-to-market benefits.”
“Infineon’s SONOS provides an easy approach for embedded flash memory with cost-effective advantages,” said Flash Lin, chief operating officer of Faraday. “We are glad to implement our new Ariel platform with Infineon’s SONOS eFlash, offering our customers an advanced solution to achieve ultra-low-power and high-performance needs for their next-generation IoT SoC designs.”
