These new transistors are packaged in a standard 8×8 mm PDFN package. The GS-065-011-2-L allows users to reduce the cost per watt of delivered powered in 45W to 150W applications while the GS-065-030-2-L is the first GaN product on the market that enables designers to get the advantages of low-cost GaN in applications up to the 3,000W power level.
These new parts extend the company's range of low-cost GaN transistors that are designed to enable designers to deliver improved performance in terms of efficiency, thermal management, and power density while providing increased design flexibility and cost effectiveness to meet the demands of consumer, industrial, and data center customers.
These transistors feature lower on-resistance, increased robustness, and thermal performance, higher VDS(transient) rating, and an industry-standard form factor that will make it easier for customers adopt, scale and commercialise.
The GS-065-011-2-L is a 650 V, 11 A, 150 mΩ bottom-side cooled transistor has been developed for consumer electronics applications such as chargers and adapters, including higher power adapter designs that benefits from the transistor’s improved thermal performance. The GS-065-030-2-L is a 650 V, 30A, 50 mΩ bottom-side cooled transistor features the lowest RDS(on) in GaN Systems' PDFN product family, which means lower power loss and higher power rating, resulting in higher efficiency and power density.
The GS-065-030-2-L GaN transistor is intended for data centre, industrial, and 5G applications such as telecom and server SMPS, motor drives, energy storage systems, and Bridgeless Totem Pole PFC solutions.
"With these new GS-065-011-2-L and GS-065-030-2-L products, our customers can leverage the benefits that come from smaller, more efficient, and more cost-effective power electronics," said Jim Witham, CEO at GaN Systems.
