Gate drive photocoupler improves efficiency in inverter circuits
Toshiba Electronics Europe has launched a high speed, high current gate drive photo IC, designed to directly drive middle capacity IGBTs or power mosfets in an extended operating temperature range of -40 to125 ºC.
With a maximum delay time of 200ns and a transmission delay time difference between different devices of 90ns, the company says the TLP352 can help designers reduce dead time and improve efficiency of inverter circuits. It has a low maximum input current of 5mA to minimise power consumption, a minimum isolation voltage of 3750Vrms and offers a peak output current of ±2.5A.
The gate drive integrates an led, photo detector and the necessary gate drive circuitry into a single DIP package. Target applications include ac servo amplifiers, industrial control, domestic solar power systems, digital home appliances, measurement equipment and induction heating products.
