Gate driver addresses performance in industrial applications

The device is said to have a 3A output current and high speed mosfet/ insulated gate bipolar transistor (igbt) gate driver optocoupler with nearly 50% reduction in propagation delay times. The company also claims it has 13% lower power consumption compared to the FOD3120 gate driver. The device is designed for high frequency driving of power mosfets and igbts at frequencies up to 250kHz. It consists of an aluminium gallium arsenide (AIGaAs) light emitting diode, optically coupled to a cmos detector with pmos and nmos output power transistors. The pmos pull up transistor has low RDS(ON) for reduced internal power consumption and near rail to rail output voltage swing. The device has been designed to offer high noise immunity, characterised by a minimum 35kV/µs common mode rejection. Features include a VCC operating range of 15 to 30V, 3A maximum peak output current and a guaranteed operating temperature range of -40 to 100^ºC. The FOD3184 also features an under voltage lockout protection with hysteresis, optimised for driving igbts.