Drivers bring enhanced functionality for industrial applications
1 min read
Infineon Technologies has launched the 1EDI EiceDRIVER compact single channel gate driver for applications with isolation voltages of up to 1200V. The galvanically isolated driver components are based on the company's Coreless Transformer Technology, which enables output currents of up to 6A on separate pins.
The basic system includes under voltage lockout for igbts and mosfets, as well as an active shutdown in the event that the driver is not connected to the power supply. The 1EDI drivers are supplied in a dso8 housing and can be used at ambient temperatures of up to 125°C in a range of applications.
The EiceDRIVER components are said to be the first driver ics to achieve a value of 100kV/µs for common mode transient immunity. The 1EDI driver devices are offered in eight variants that can be operated at up to 1200V and for use with either igbts or mosfets.
The mosfet versions, as well as one igbt variant, supply an output current of 6A. The mosfet driver is optimised for use with CoolMOS based power semiconductors. Due to lower induction loss, EiceDRIVER enables an gain in efficiency of 0.5% when used with CoolMOS C7 devices. Further igbt only variants with rated at 0.5, 2 and 4A will be available in the future.
Five variants have a separate output for charging and discharging the gate, while three further variants are structured to limit the gate voltage – using an active Miller clamp – and provide outputs of 1, 2 and 3A.
In addition to the compact class, the EiceDRIVER family also includes the EiceDRIVER Enhanced class, said to offer increased functionality for industrial applications, as well as some consumer products.
