By combining Infineon’s gallium nitride (GaN) based power solutions with circuit topology and control technology developed by OMRON they have created one of Japan’s smallest and lightest vehicle-to-everything (V2X) charging systems.
This partnership is seen as helping to drive innovation towards wide bandgap materials in power supplies and to accelerate the transition to renewable energies, a smarter grid, and the adoption of electric vehicles, while encouraging greater decarbonisation and digitalisation.
The V2X system, the KPEP-A series, combines Infineon’s CoolGaN technology with what is said to be a ‘unique’ control technology.
OMRON Social Solutions has upgraded its EV charger and discharger system allowing for bi-directional charging and discharging paths between renewable energy sources, the grid, and EV batteries.
The KPEP-A series is claimed to be one of the smallest and lightest multi-V2X systems in Japan with a 60% reduction in size and weight compared to similar conventional charger and discharger designs yet providing a charging capability of 6 kW.
With the integration of Infineon’s CoolGaN solution, the power efficiency of the V2X systems has increased by more than 10% at light load and around 4% at rated load. By improving efficiency and delivering a reduction in size and weight, the new system allows easier installation and maintenance and offers a wider range of options for installation locations.
“We are pleased to partner with OMRON Social Solutions as our CoolGaN based solutions directly contribute to speed up the transition to renewable energies which reduces CO2 emissions and drives decarbonisation,” said Adam White, Division President Power & Sensor Systems at Infineon. “It will also make charging of electric vehicles easier and more convenient for consumers, helping to overcome one of the biggest barriers to EV adoption."
Atsushi Sasawaki, Managing Executive Officer and Senior General Manager for Energy Solutions Business of OMRON Social Solutions added, “Having access to a broad portfolio of WBG solutions significantly increases the functionality, performance and quality of our products. We look forward to further developing GaN- and SiC-based power solutions together with Infineon to help drive renewable energy and electric vehicles.”
Wide bandgap semiconductors made of silicon carbide and gallium nitride differ significantly from conventional semiconductors as they allow for greater power efficiency, smaller size, lighter weight, and lower overall cost.
Infineon has developed a broad product and technology portfolio including silicon, silicon carbide and gallium-nitride-based devices.
