Infineon unveils next gen thinQ! Schottky diodes

As well as a more compact design, the devices are said to offer improved thermal characteristics and a figure of merit (Q_c x V_f) in the order of 30% lower compared to the previous generation devices. Additional benefits include improved efficiency in pfc and boost stages over all load conditions, reduced electromagnetic interference, increased system reliability and cost/size savings due to reduced cooling requirements. The fifth generation products are targeted for use in high end server and telecom switched mode power supply, pc silverbox and lighting applications, solar inverters and uninterruptible power supply systems. "Infineon has significantly improved and expanded the portfolio since the first introduction of its SiC Schottky diodes in 2001," commetned the company's head of high voltage power conversion, Jan-Willem Reynaerts. "The Generation 5 enables further improvements in system efficiency and power density compared to previous generations, in combination with an attractive price/performance ratio."