The CoolSiC Schottky diode family is now ready for current and future on-board charger (OBC) applications in hybrid and electric vehicles. Infineon has designed the diodes specifically to meet the requirements of the automotive industry regarding reliability, quality and performance.
This product family is based on Infineon’s 5th generation Schottky Diode, which Infineon says has been further improved to meet the reliability requirements demanded by the automotive industry. Thanks to a new passivation layer concept, Infineon claims this is the “most robust automotive device available in the market regarding humidity and corrosion”.
As it is based on a 110µm thin wafer technology, Infineon says it shows one of the best figures of merit (Qc x Vf) in its category. A lower figure of merit implies lower power losses and therefore a better electrical performance.
Compared to the traditional Silicon Rapid diode, the CoolSiC Automotive Schottky Diode can improve the efficiency of an OBC by 1% point over all load conditions. This leads to a potential reduction of 200kg of CO2 emissions over the typical lifetime of an electric car, based on the German energy mix.
The first derivate will be available for the open market in September 2018 in the 650V class. Using a standard 3-pinTO247 package, the new products can be implemented in an OBC system. They can optimally be used in combination with Infineon’s TRENCHSTOP IGBT and CoolMOS products.
