With an initial two-year scope of work, IQE and X-FAB will collaborate to develop a 650V GaN device. The agreement leverages IQE’s GaN epitaxy design and process expertise, along with X-FAB’s proven technology development and device fabrication capabilities to offer an optimised technology-substrate combination for automotive, data centre and consumer applications.
This collaboration will provide fabless semiconductor companies with an off-the-shelf GaN platform that will help to accelerate innovation cycles and time-to-market. The technology will also serve as a foundation for future product development, extending beyond 650V to address the growing market demand for Power Electronics.
According to Jutta Meier, Interim Chief Executive Officer and Chief Financial Officer of IQE, “We are excited to join forces with X-FAB to develop a world-class GaN Power foundry solution in Europe, providing outsourced optionality for our fabless customers. Building on our GaN epitaxy expertise and recent investment in additional GaN reactor capacity, this agreement aligns with our GaN diversification strategy, expands our customer reach, and accelerates time-to-market for GaN Power applications.”
"By combining our long-standing expertise in GaN device fabrication and design enablement with IQE’s epitaxy leadership, we are creating a unique, turnkey GaN Power platform," explained Jörg Doblaski, Chief Technology Officer at X-FAB.
"In addition to our existing GaN technology, this collaboration provides a compelling alternative to existing supply chain models and strengthens Europe’s position in next-generation power semiconductor technology."
