MicroLEDs based upon gallium nitride (GaN) and gallium arsenide (GaAs) semiconductors are a disruptive new display technology that is being designed into multiple new platforms such as wearables, AR/VR headsets and large format displays.
IQE’s GaN and GaAs epitaxy is critical in enabling faster adoption of microLEDs due to IQE’s leading technology, high-volume manufacturing platforms and resulting scale which provides customers with a significant commercial advantage.
The launch of IQE’s differentiated microLED wafer products will provide its customers with faster-time-to-market options for display-level qualification. With multi-wavelength solutions available at wafer diameters including new options at 200mm (8”), IQE providing qualified foundry capacity from its multi-continent operations - a significant point of difference as it provides customers with epitaxy supply chain diversification.
By scaling the technology roadmap from 200mm (8”) to 300mm (12”), IQE said that it would be able to provide the industry with a cost-effective solution.
Commenting Dr. Mark J. Furlong, Executive Vice President of Business Development of IQE said, “We are pleased to offer our customers the industry’s broadest range of materials technology platforms for microLED display qualification. We recognise that IQE can play a critical role in accelerating the deployment of microLEDs across many end applications and the launch of this new portfolio is in line with our strategy to diversify into GaN technologies, in the high-growth display market.”
