SK siltron is a developer of next-generation semiconductor technology, and this agreement formalises a strategic agreement to develop business in the Asia market, leveraging SK siltron’s substrate with IQE’s epitaxy capabilities.
IQE and SK siltron said that their focus will be on developing and delivering innovative epiwafers based upon Gallium Nitride (GaN) on Silicon Carbide (SiC) for radio frequency applications in the wireless communications market and GaN on Silicon (Si) for power electronics applications across a range of markets.
Combined, these markets represent a multi-billion-dollar opportunity for GaN devices and are forecast for strong growth in consumer, telecom and automotive applications.
Americo Lemos, Chief Executive Officer of IQE, said, “There are tremendous synergies between IQE’s GaN pedigree and SK siltron’s substrate offerings, and we will leverage these to bring innovative solutions to market. Expansion in Asia is a key focus for IQE and we are excited to be partnering with a globally-recognised leader in advanced materials.”
Commenting Yongho Jang, Chief Executive Officer of SK siltron, added, “We are delighted that two world leaders in advanced materials are joining forces to jointly develop products for exciting growth markets related to GaN materials. I am looking forward to building considerable success with IQE and developing the relationship to cover a broad range of semiconductor materials.”
