IR ships first GaN-on-Si devices
International Rectifier has begun shipping the first devices based on its GaN based power device technology platform.
The company's president and ceo, Oleg Khaykin, said the move signalled a 'new era' for power conversion.
"We fully anticipate the potential impact of GaN based technology on the power conversion market to be at least as large as the introduction of the power HEXFET by IR over 30 years ago," he commented.
The GaN-based platform is the result of ten years of research and development by IR, and is based on the company's high throughput, 150mm GaN-on-Si epitaxy.
"We are excited about GaN, and see it as one of the major drivers for our long term revenue growth and market share expansion," Khaykin concluded.
