GaN on Si breakthrough marks move to silicon based leds
1 min read
In a move described as a 'game changer' for the solid state lighting industry, clean tech start up, Bridgelux has beaten its previous industry record for the highest lumen per watt values achieved for Gallium Nitride on Silicon, or GaN on Si devices.
Using its proprietary buffer layer technology, the company grew layers of GaN on 8in silicon wafers - without bowing or cracking - at room temperature. It claims its leds feature performance levels comparable to today's state of the art sapphire based leds.
"The performance levels that we announced today are the highest Lm/W values yet published for GaN on Si and rival the best commercial leds grown on sapphire or silicon carbide," said Dr Steve Lester, Bridgelux' cto. "We will continue to aggressively develop our GaN on Si processes in order to drive the migration of led commercial production from sapphire to silicon substrates."
The firm's cool white leds had efficiencies of 160Lm/W at a CCT of 4350K, while its warm white leds constructed from the GaN on Si chips delivered 125Lm/W at a colour temperature of 2940K and a CRI of 80. The first commercially available GaN on Si products are scheduled for delivery to the market within the next two years.
"This key innovation is a game changer for the industry, delivering dramatic reductions in the upfront capital investment required for solid state lighting and thereby significantly increasing the rate of market adoption," stated ceo Bill Watkins.
