Metallisation process improved
1 min read
A leading provider of technology for deposition of the nanometric films used in semiconductor interconnects and 3d through silicon vias (TSV) is claiming a groundbreaking advance in TSV formation that eliminates one metallisation step.
By eliminating the seed layer step from the standard isolation barrier seed process flow, Alchimer's newest product, AquiVia XS, allows bulk fill to take place directly after application of the barrier layer. The new product is also said to be the first deposition solution to support both nickel and copper metallisation.
"Our customers in the chipmaking community need to keep up with the rapidly growing demand for vertically integrated devices, and the AquiVia XS approach provides a previously impossible combination of film quality, broad applicability and cost benefits," said Alchimer's ceo Steve Lerner.
According to the company, cost of ownership analyses for a typical 5 x 50µm TSV show an 80% improvement over the traditional dry process stack.
AquiVia XS enables the use of existing plating equipment for layer deposition and eliminates all dry processing techniques from TSV metallisation.
