N-channel power mosfet minimises on-state resistance
Vishay Intertechnology has launched a 600V, 47A, n-channel power mosfet with low maximum on-resistance of 0.07O at a 10V gate drive, as well as an improved gate charge of 216 nC in the TO-247 package.
The SiHG47N60S's 15.12 O-nC gate charge times on-resistance in a bid to create lower conduction losses and save energy in inverter circuits and pulsewidth modulation (PWM) full-bridge topologies.
Developed using Vishay Super Junction technology, the mosfet has been designed to minimise on-state resistance and withstand high energy pulses in the avalanche and commutation mode. The device is compliant to RoHS Directive 2002/95/EC and avalanche tested for reliable operation.
