NXP and ZF collaborate on SiC-based traction inverters to boost EV powertrains

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NXP Semiconductors is collaborating with ZF, a specialist in e-mobility, on next-generation SiC-based traction inverter solutions for electric vehicles (EVs).

Credit: NXP

The collaboration looks to leverage NXP’s advanced GD316x high-voltage (HV) isolated gate drivers to accelerate the adoption of 800-V and SiC power devices. Safer, more efficient and higher performing traction inverters can be enabled by the GD316x product family and can be designed to extend EV range and reduce the number of charging stops while lowering system level costs for OEMs.

This announcement is being described as a significant step towards accelerating the electrification of the automotive industry delivering more energy-efficient EVs for the future.

"We look forward to working with NXP to raise the bar for the capabilities and performance of our 800-V traction inverter solutions, which will help us achieve our goals of reducing emissions and promoting sustainability," said Dr. Carsten Götte, SVP Electrified Powertrain Technology at ZF. "The combination of ZF's expertise in motor control and power electronics with NXP's GD316x gate driver family enables us to provide our latest SiC-based traction inverters with higher power and volume density, efficiency and differentiation, and provide our customers with significant safety, efficiency, range and performance improvements."

Traction inverters are a critical component of an EV’s electric powertrain, converting DC voltage from the battery into a time-varying AC voltage, which drives the vehicle's motor.

As traction inverters now migrate to SiC-based designs, the SiC power devices need to be paired with HV isolated gate drivers to harness the advantages they provide, such as higher switching frequency, lower conduction losses, better thermal characteristics and higher robustness at high voltages, when compared to previous generation silicon-based IGBT and MOSFET power switches.

The GD316x family incorporates a number of programmable control, diagnostic, monitoring, and protection features, enhanced to drive the latest SiC power modules for automotive traction inverter applications. Its high level of integration allows a smaller footprint and simplifies the system design.

These capabilities help to reduce Electromagnetic Compatibility (EMC) noise while also reducing switching energy losses for better efficiency. Fast short-circuit protection times (< 1 µsec) in combination with powerful and programmable gate drive schemes help to optimise the performance of the traction inverter’s SiC power modules.

“Together with ZF, we are developing next-generation power electronics for future EVs,” said Robert Li, Senior Vice President and General Manager, Electrification at NXP. “Our gate driver family implements a number of outstanding features to both protect and unleash the benefits of high-voltage SiC power switches, making them an ideal choice for ZF’s new SiC-based traction inverter solutions. This collaboration is a testament to our commitment to delivering state-of-the-art solutions that enable OEMs to achieve their EV performance and sustainability goals.”

ZF traction inverters, enabled by NXP’s GD316x product family, are already on the road.