NXP secures £2m grant to further GaN research in UK
The UK government has awarded a £2million grant to NXP to help it develop next generation Gallium Nitride (GaN) power semiconductors at its research facility in Stockport.
The funding has been awarded as part of the third round of the Regional Growth Fund and will be used to recruit extra R&D staff, make prototype models, consult the UK's leading academics and provide equipment for the development phase.
It is expected to safeguard over 400 existing jobs and create up to 100 new positions.
Speaking in Manchester about the funding, The Chief Secretary to the Treasury Danny Alexander, said: "I'm very pleased that money from the Regional Growth Fund is supporting the world leading GaN research facility in Stockport, which is a great boost for the local area, supporting a huge private sector investment and local jobs."
