Power mosfets offer ‘leading’ on-state resistance
STMicroelectronics' new STripFET VII DeepGATE mosfets are designed to deliver the best possible conducting efficiency among 80 and 100V devices, while also reducing switching efficiency.
Targeted at applications such as computing systems, solar inverters and industrial automation equipment, the devices feature an advanced internal gate structure, which is said to lower on state resistance while also reducing internal capacitances and gate charge.
In addition, the mosfets have high avalanche ruggedness to survive potentially damaging hard conditions, making them suitable for automotive applications. ST claims they help to simplify designs and reduce equipment size and cost.
