Power transistor achieves industry leading thermal performance claims Nitronex
1 min read
Nitronex has developed a new generation of power transistor platform technology to meet the growing demand for wideband, high power and robust rf power amplifiers. The platform has specifically been designed to meet the performance requirements of military communications, jammers and radars.
The NPT1010 has a thermal resistance of 1.4°C/W, according to Nitronex, the lowest thermal resistance of all GaN products at this power level in the marketplace. Normalised to power, the company claims its thermal resistance is lower than the competing 28V products by 30%. The device achieves over 60W, more than 55% drain efficiency and over 14dB power gain in a 500-1000MHz broadband application circuit with under 80°C rise in junction temperature.
Ray Crampton, vp of Engineering at Nitronex says designers focused their efforts on reducing thermal rise and developed a complete plan to attack key factors such as FET design, die thickness, die attach methods and package materials. "We recognised early on that the contribution of the substrate is secondary to the contribution of other factors, particularly the FET design", Crampton explained. "By combining improvements from several areas, we achieved a 22% improvement in thermals compared to our last generation products".
The NPT1010 is available in a ceramic air cavity package in bolt-down and pill (solder) versions. It is lead-free and RoHS compliant.
