These radiation hardened (RadHard) devices feature the highest levels of space assurance required for the longest, harshest space missions and include the first 1Gb monolithic NOR Flash Memory device enabling the storage of mission critical boot images.
“Modern space programmes require more processing power in ever smaller packages. By using our new SONOS RadHard NOR Flash Memories, the most contemporary FPGAs can deliver greater processing power for superior mission capability and functionality,” said Mike Elias, Senior Vice President and General Manager, Space Systems Division, CAES. “Our long-range product and technology roadmap is aligned with leading FPGA and processor producers, ensuring technology relevance, scalability and interoperability with their programs.”
Purpose-built using intrinsically radiation-hardened Silicon-Oxide-Nitride-Oxide-Silicon (SONOS) memory technology, CAES’ RadHard NOR Flash Memories are specifically designed for space applications and meet the needs of current and next-generation microprocessors and FPGAs, including CAES’ GR740, low power Certus-NX-RT and CertusPro-NX-RT, as well as Xilinx’s XQRKU060 and AI-optimised VERSALTM devices.
SONOS technology has exceptional bit-cell radiation resilience and is capable of delivering over 300 krad (Si) TID and 100K cycles per sector performance. CAES’ RadHard design techniques lower error rates, suiting the new devices to the highest-reliability mission profiles in the harshest environments, including those requiring QML-Q and QML-V military- and space-grade qualification.
CAES RadHard NOR Flash Memories are available in 1Gb and 64Mb densities, with standard x1, x8 and x16 parallel or SPI interfaces and are powered by a single, wide-range, 1.8V - 3.3V source.
The new modules also allow configurable read/write modes, enabling the same scalable technology block to be reused multiple times.